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HN7G01FE

Toshiba Semiconductor
Part Number HN7G01FE
Manufacturer Toshiba Semiconductor
Description Power Management Switch Applications
Published Feb 10, 2009
Detailed Description HN7G01FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G01FE Unit: mm Power Management Switch Applications ...
Datasheet PDF File HN7G01FE PDF File

HN7G01FE
HN7G01FE

Overview
HN7G01FE TOSHIBA Multichip Discrete Device www.
DataSheet4U.
com HN7G01FE Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • • Q1 (transistor): 2SA1955 equivalent Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating −15 −12 −5 −400 −50 Unit V V V mA mA 1.
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EMITTER BASE DRAIN SOURCE GATE COLLECTOR Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Symbol VDS VGSS ID Ratin...


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