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2N3447

Part Number	2N3447
Manufacturer	SavantIC
Description	Silicon NPN Power Transistors
Published	Jan 23, 2009
Detailed Description	SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N3447 DESCRIPTION ·...
Datasheet	2N3447 PDF File

Overview

SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon NPN Power Transistors 2N3447 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications.
PINNING PIN 1 2 3 Base Emitter Collector Fig.
1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 60 7 7.
5 115 150 -65~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.
17 UNIT /W SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=30mA ;IB=0 IC=5A; IB=0.
5A IC=7A;IB=1.
5A IC=5A ; VCE=5V VCE=60V; IB=0 VCB=80V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=5V 40 MIN 60 TYP.
2N3447 SYMBOL V(BR)CEO VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICBO IEBO hFE MAX UNIT V 1.
5 3.
0 1.
5 0.
7 0.
1 0.
1 120 V V V mA mA mA 2 SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3447 Fig.
2 outline dimensions (unindicated tolerance:±0.
1mm) 3 ...

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