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2N3226

SavantIC
Part Number 2N3226
Manufacturer SavantIC
Description Silicon NPN Power Transistors
Published Jan 23, 2009
Detailed Description SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N3226 DESCRIPTION ·...
Datasheet PDF File 2N3226 PDF File

2N3226
2N3226

Overview
SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon NPN Power Transistors 2N3226 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For power amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector Fig.
1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 35 35 5 5 75 150 -65~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.
17 UNIT /W SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.
2A ;IB=0 IC=3A; IB=0.
3A IC=5A ;IB=1.
0A IC=3A ; VCE=4V VCE=35V; IB=0 VCB=35V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=3A ; VCE=4V 40 20 MIN 35 TYP.
2N3226 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICBO IEBO hFE-1 hFE-2 MAX UNIT V 1.
0 2.
0 2.
0 1.
0 0.
1 0.
1 V V V mA mA mA 2 SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3226 Fig.
2 outline dimensions (unindicated tolerance:±0.
1mm) 3 ...


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