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2N3196

SavantIC
Part Number 2N3196
Manufacturer SavantIC
Description Silicon PNP Power Transistors
Published Jan 23, 2009
Detailed Description SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2N3196 DESCRIPTION ·...
Datasheet PDF File 2N3196 PDF File

2N3196
2N3196

Overview
SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors 2N3196 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.
1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -5 -5 75 150 -65~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.
17 UNIT /W SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-0.
2A ;IB=0 IC=-5A; IB=-1A IC=-5A ; VCE=-4V VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VEB=-5V; IC=0 IC=-0.
3A ; VCE=-4V IC=-3A ; VCE=-4V 30 15 MIN -60 TYP.
2N3196 SYMBOL VCEO(SUS) VCE(sat) VBE(on) ICEO ICBO IEBO hFE-1 hFE-2 MAX UNIT V -1.
5 -2.
0 -5.
0 -0.
1 -1.
0 V V mA mA mA 2 SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N3196 Fig.
2 outline dimensions (unindicated tolerance:±0.
1mm) 3 ...


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