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2SK3797

Part Number	2SK3797
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel MOSFET
Published	Jan 20, 2009
Detailed Description	2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) www.DataSheet4U.com 2SK3797 Unit: mm Swit...
Datasheet	2SK3797 PDF File

Overview

2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) www.
DataSheet4U.
com 2SK3797 Unit: mm Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.
32Ω (typ.
) High forward transfer admittance: |Yfs| = 7.
5 S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 13 52 50 1033 13 5.
0 150 -55~150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) ...

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