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2SK3766

Toshiba Semiconductor
Part Number 2SK3766
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOS Type FET
Published Jan 20, 2009
Detailed Description 2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) www.DataSheet4U.com 2SK3766 Unit: mm Swit...
Datasheet PDF File 2SK3766 PDF File

2SK3766
2SK3766


Overview
2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) www.
DataSheet4U.
com 2SK3766 Unit: mm Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.
9 Ω (typ.
) High forward transfer admittance: |Yfs| = 0.
65 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 3.
5~4.
5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 450 450 ±30 2 5 30 103 2 3 150 −55~150 Unit V V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: S...



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