SDRAM DIMM
Description
M366S0823FTS
M366S0823FTS SDRAM DIMM
PC133/PC100 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.
3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung M366S0823FTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module.
The Samsung M366S0823FTS consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.
One 0.
1uF and one 0.
33 uF decoupling capacitors are mounted on the printed circuit board in parallel for each www.
DataSheet4U.
com SDRAM.
The M366S0823FTS is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock.
I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FEATURE
• Performance range Part No.
Max Freq.
(Speed) M366S0823FTS-C7A 133MHz (7.
5ns @ CL=3) M366S0823FTS-C1H 100MHz (10ns @ CL=2) M366S0823FTS-C1L 100MHz (10ns @ CL=3) Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.
3V ± 0.
3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Serial presence detect with EEPROM PCB : Height (1,375mil) , single sided component
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PIN CONFIGURATIONS (Front side/back side)
Pin Front Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 VSS DQ0 DQ1 DQ2 DQ3 VDD DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VDD DQ14 DQ15 *CB0 *CB1 VSS NC NC VDD WE DQM0 Front Pin Front Pin Back VSS DQ32 DQ33 DQ34 DQ35 VDD DQ36 DQ37 DQ38 DQ39 DQ40 VSS DQ41 DQ42 DQ43 DQ44 DQ45 VDD ...
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