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2SK4107

Part Number	2SK4107
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Dec 3, 2008
Detailed Description	2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4107 ○ Switching Regulator Application...
Datasheet	2SK4107 PDF File

Overview

2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4107 ○ Switching Regulator Applications Unit: mm • Low drain−source ON resistance : RDS (ON) = 0.
33 Ω (typ.
) • High forward transfer admittance : |Yfs| = 8.
5 S (typ.
) • Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note ...

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