P-Channel Power MOSFET
Description
AO4433 P-Channel Enhancement Mode Field Effect Transistor
General Description
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Features
VDS (V) = -30V ID = -11 A (V GS = -20V) RDS(ON) < 14mΩ (VGS = -20V) RDS(ON) < 18mΩ (VGS = -10V) ESD Rating: 1.
5KV HBM
The AO4433 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.
This device is suitable for use as a load switch or in PWM applications.
The device is ESD protected.
Standard product AO4433 is Pb-free (meets ROHS & Sony 259 specifications).
AO4433L is a Green Product ordering option.
AO4433 and AO4433L are electrically identical.
SOIC-8 Top View S S S G D D D D
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -30 ±25 -11 -9.
7 -50 3 2.
1 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 28 54 21
Max 40 75 30
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4433
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON)
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Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-20V, ID=-11A TJ=125°C
Min -30
Typ
Max
Units V
Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance
-1 -5 ±1 -2 -50 11 15 13.
8 38.
5 20 -0.
72 14 19 18 -2.
8 -4
µA µA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns
RDS(ON)
gFS VSD IS
VGS=-10V, ID=-10A VGS=-4.
5V, ID=-4A Forward Transconductance VDS=-5V, ID=-11A Diode Forward Voltage I...
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