Silicon N-Channel MOSFET
Description
H7N0401LD, H7N0401LS, H7N0401LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1129-0500 (Previous: ADE-208-1527C) Rev.
5.
00 Apr 07, 2006
Features
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DataSheet4U.
com R
• Low on-resistance DS (on) = 3.
1 mΩ typ.
• 4.
5 V gate drive devices • High Speed Switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4 4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
1.
Gate 2.
Drain 3.
Source 4.
Drain
1 1 2 3 2 3
H7N0401LD
H7N0401LS
RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) )
4
D
G
1
2
3
S
H7N0401LM
Rev.
5.
00 Apr 07, 2006 page 1 of 8
H7N0401LD, H7N0401LS, H7N0401LM
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature
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DataSheet4U.
com Storage temperature
Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value 40 ±20 95 380 95 65 560 100 150 –55 to +150
Unit V V A A A A mJ W °C °C
IAP Note 3 EAR Pch Tch
Note 2
Note 3
Tstg
Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4.
Pulse test Symbol V (BR) DSS IDSS IGSS VGS (off) |yfs| RDS (on) Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 40 — — 1.
5 60 — — — — — — — — — — — — — — Typ — — — — 100 3.
1 4.
8 9300 1300 670 160 36 40 45 270 130 85 0.
95 50 Max — 10 ±0.
1 2.
5 — 4.
2 7.
0 — — — — — — — — — — — — Un...
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