NPN SILICON HIGH FREQUENCY TRANSISTOR
Description
MS175H
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The MS175H is Designed for High Frequency Low Noise Amplifier and Oscillator Applications.
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PACKAGE STYLE TO-72
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG 100 mA (PEAK) 15 V 300 mW @ TC = 25 C O 200 mW @ TA = 25 C -65 C to +200 C -65 C to +200 C
O O O O O
1 = EMITTER 3 = COLLECTOR
2 = BASE 4 = CASE
CHARACTERISTICS
SYMBOL
BVCEO BVCBO ICBO BVEBO hFE VCE(SAT) VBE(SAT) ft Cob Cib NF Gpe Po η
TC = 25 C
O
NONE
TEST CONDITIONS
IC = 5.
0 mA IC = 10 µA VCB = 20 V TA = 150 C IE = 1.
0 µA VCE = 1.
0 V IC = 20 mA IC = 20 mA VCE = 10 V VCB = 0 V VCB = 10 V VEB = 0.
5 V VCE = 6.
0 V VCB = 10 V IC = 1.
5 mA IE = 12 mA IC = 5.
0 mA IB = 2.
0 mA IB = 2.
0 mA IC = 5.
0 mA f = 100 MHz f = 1.
0 MHz f = 1.
0 MHz f = 1.
0 MHz f = 200 MHz f = 500 MHz
O
MINIMUM TYPICAL MAXIMUM
15 30 0.
01 1.
0 2.
0 40 150 0.
8 1.
0 1500 3.
0 1.
0 3.
0 3.
5 15 30 25 4.
5
UNITS
V V µA V --V V MHz pF pF dB mW %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV.
A
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