STW20NM50FD
Description
N-CHANNEL 500V - 0.
22Ω - 20A TO-247 FDmesh™ Power MOSFET (with FAST DIODE)
TYPE STW20NM50FD
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s s s s s
STW20NM50FD
VDSS 500V
RDS(on) <0.
25Ω
ID 20 A
RDS(on) = 0.
22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS
3 2 1
TO-247
DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fastrecovery body diode.
It is therefore strongly recommended for bridge topologies, in particular ZVS phaseshift converters.
APPLICATIONS s ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature Value 500 500 ±30 20 14 80 214 1.
42 20 –65 to 150 150
(1)ISD ≤ 20A, di/dt ≤400A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*)Limited only by maximum temperature allowed
Unit V V V A A A W W/°C V/ns °C °C
(•)Pulse width limited by safe operating area
June 2002
1/8
STW20NM50FD
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.
585 30 300 °C/W °C/W °C
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) Max Value 10 700 Unit A mJ
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ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdo...
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