Tthe RF Line NPN Silicon Push-Pull RF Power Transistor
Description
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF393/D
The RF Line
NPN Silicon Push-Pull RF Power Transistor
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.
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designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.
• Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.
5 dB (Class AB); 8.
5 dB (Class C) Efficiency = 55% (Typ) • Built–In Input Impedance Matching Networks for Broadband Operation • Push–Pull Configuration Reduces Even Numbered Harmonics
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MRF393
100 W, 30 to 500 MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON
• Gold Metallization System for High Reliability • 100% Tested for Load Mismatch
2 6 5, 8 7 3 CASE 744A–01, STYLE 1 The MRF393 is two transistors in a single package with separate base and collector leads and emitters common.
This arrangement provides the designer with a space saving device capable of operation in a push–pull configuration.
1, 4
PUSH–PULL TRANSISTORS
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 30 60 4.
0 16 270 1.
54 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.
65 Unit °C/W
NOTE: 1.
This device is designed for RF operation.
The total device dissipation rating applies only when the device is operated as an RF push–pull amplifier.
REV 7
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.
)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.
0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR...
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