DatasheetsPDF.com

2SK4059TK

Part Number	2SK4059TK
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel MOS Type FET
Published	Oct 7, 2008
Detailed Description	2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM • Application for compact E...
Datasheet	2SK4059TK PDF File

Overview

2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM • Application for compact ECM 0.
22±0.
05 1.
2±0.
05 0.
8±0.
05 0.
32±0.
05 3 2 0.
1±0.
05 Unit: mm Absolute Maximum Ratings (Ta=25°C) 0.
45 0.
45 1.
4±0.
05 www.
DataSheet4U.
com Characteristic Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the o...

Similar Datasheet

2SK4059TK Silicon N-Channel MOS Type FET - Toshiba Semiconductor
2SK4059TV Silicon N-Channel MOS Type FET - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)