Silicon N-Channel MOSFET
Description
SSM3K309T
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K309T
○ Power Management Switch Applications ○ High-Current Switching Applications
1.8V drive Low on-resistance : Ron = 47mΩ (max) (@VGS = 1.8V)
: Ron = 35mΩ (max) (@VGS = 2.5V) : Ron = 31mΩ (max) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristic
Symbol
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