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IRF654A

Advanced Power MOSFET

Description

Advanced Power MOSFET FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 250V ♦ Low RDS(ON) : 0.108 Ω (Typ.) IRF654A BVDSS = 250 V RDS(on) = 0.14 Ω ID = 21 A TO-220 1 2 3 www.DataSheet4U.com 1.Gate 2. Drain 3. ...

Fairchild Semiconductor

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