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MT6L57AE

Toshiba Semiconductor

VHF-UHF Band Low Noise Amplifier Application - Toshiba Semiconductor

MT6L57AE
MT6L57AE

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Description
MT6L57AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AE VHF~UHF Band Low Noise Amplifier Applications • Two devices are built in to the super-thin and extreme super mini (6 pins) package: ES6 Unit: mm Mounted Devices www.
DataSheet4U.
com Q1: SSM (TESM) Three-pins (SSM/TESM) mold products are corresponded.
MT3S06S (MT3S06T) Q2: SSM (TESM) MT3S04AS (MT3S04AT) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC (Note 1) Tj Tstg Q1 10 5 1.
5 15 7 100 125 −55~125 Q2 10 5 2 40 10 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-2N1C Weight: 0.
003 g (typ.
) Note 1: Total power dissipation of Q1 and Q2.
Marking Pin Assignment (top view) 1 2003-07-31 MT6L57AE Electrical Characteristics Q1 (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Symbol ICBO IEBO hFE fT S21e2 (1) S21e2 (2) NF (1) NF (2) Cre Test Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCE = 3 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 2 GHz VCB = 1 V, IE = 0, f = 1 MHz (Note 2) Min   70 7  4.
5    Typ.
   10 7.
5 8 1.
7 1.
6 0.
35 Max 0.
1 1 140    3 3 0.
75 GHz dB Unit µA µA Noise figure www.
DataSheet4U.
com Reverse transfer capacitance dB pF Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Electrical Characteristics Q2 (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Transition frequency Symbol ICBO IEBO hFE fT (1) fT (2) S21e2 (1) S21e (2) NF (1) NF (2) Cre 2 Test Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA VCE = 3 V, IC = 7 mA VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 3 V, ...


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