VHF-UHF Band Low Noise Amplifier Application - Toshiba Semiconductor
Description
MT6L56E
Preliminary
TOSHIBA Transistor
Silicon NPN Epitaxial Planar Type
MT6L56E
VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
Unit: mm
•
Two devices are built into the super-thin and ultra-super-mini (6-pin) ES6 package.
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Mounted Devices
Q1: SSM (TESM) Three-pin (SSM/TESM) product No.
MT3S07S (MT3S07T) Q2: TESM MT3S08T
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC (Note 1) Tj Tstg Q1 10 5 1.
5 25 7 150 125 −55~125 Q2 20 8 1.
5 40 10 Unit V V V mA mA mW °C °C
JEDEC JEITA TOSHIBA
― ― 2-2N1C
Weight: 3 mg (typ.
)
Note:
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Total power dissipation of Q1 and Q2 mounted on the circuit board
Marking
6 5 4
Pin Connections
B1 E2 B2
A
S
Q1
Q2
1
2
3
C1
E1
C2
1
2007-11-01
MT6L56E
Electrical Characteristics Q1-Side (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Symbol ICBO IEBO hFE fT ⎪S21e⎪ (1) ⎪S21e⎪ (2) NF (1) NF (2) Cre
2 2
Test Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCE = 3 V, IC = 10 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 15 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = ...
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