VHF-UHF Band Low Noise Amplifier Applications - Toshiba Semiconductor
Description
MT6L52AE
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L52AE
VHF~UHF Band Low Noise Amplifier Applications
• Two devices are built in to the super-thin and extreme super mini (6 pins) package: ES6 Unit: mm
Mounted Devices
Q1: SSM (TESM) Q2: SSM (TESM) MT3S04AS (MT3S04AT)
www.
DataSheet4U.
com Three-pins (SSM/TESM) mold products are corresponded.
MT3S03AS (MT3S03AT)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC (Note 1) Tj Tstg Q1 10 5 2 40 10 100 125 −55~125 Q2 10 5 2 40 10 Unit V V V mA mA mW °C °C
JEDEC JEITA TOSHIBA
― ― 2-2N1C
Weight: 0.
003 g (typ.
)
Note:
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Total power dissipation of Q1 and Q2.
Marking
Pin Assignment (top view)
1
2007-11-01
MT6L52AE
Electrical Characteristics Q1 (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current DC current gain Transition frequency Symbol ICBO IEBO hFE fT (1) fT (2) ⎪S21e⎪ (1) ⎪S21e⎪ (2) NF (1) NF (2) Cre
2 2
Test Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA VCE = 3 V, IC = 10 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz VCB = 1 V, IE = 0, f = 1 MHz (Not...
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