Asymmetric Integrated Gate- Commutated Thyristor
Description
VDRM ITGQM ITSM V(T0) rT VDC-link
= = = = = =
4500 4000 32×103 1.
4 0.
325 2800
V A A V mΩ V
Asymmetric Integrated GateCommutated Thyristor
5SHY 35L4510
Doc.
No.
5SYA1232-02 June 07
• High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and wide temperature range • High reliability • High electromagnetic immunity • Simple control interface with status feedback • AC or DC supply voltage • Contact factory for series connection
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Blocking
Maximum rated values
1)
Parameter Symbol Conditions Rep.
peak off-state voltage VDRM Gate Unit energized Permanent DC voltage for VDC-link 100 FIT failure rate of GCT Reverse voltage
Characteristic values
min
typ
max 4500 2800 17 10
Unit V V V V Unit mA
Ambient cosmic radiation at sea level in open air.
Gate Unit energized IGCT in off-state on-state
VRRM
Parameter Symbol Conditions Rep.
peak off-state current IDRM VD = VDRM, Gate Unit energized
min
typ
max 50
Mechanical data (see Fig.
11, 12) 1)
Maximum rated values
Parameter Mounting force
Characteristic values
Symbol Conditions Fm Symbol Conditions Dp ± 0.
1 mm H m Ds Da l h Anode to Gate Anode to Gate ± 1.
0 mm ± 1.
0 mm
min 36 min 25.
3 33 10
typ 40 typ 85
max 44 max 25.
8 2.
9
Unit kN Unit mm mm kg mm mm
Parameter Pole-piece diameter Housing thickness Weight Surface creepage distance Air strike distance Length Height
439 40 173
mm mm mm
Width IGCT w ± 1.
0 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SHY 35L4510
GCT Data
On-state (see Fig.
1)3, 4, 5, 6, 14, 15)
Maximum rated values
Parameter Max.
average on-state current Max.
RMS on-state current Max.
peak non-repetitive surge on-state current Limiting load integral Max.
peak non-repetitive surge on-state current Limiting load integral
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Symbol Conditions IT(AV)M Half sine wave, TC = 85 °C, Dou...
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