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SSM4K27CT

Toshiba Semiconductor
Part Number SSM4K27CT
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Aug 8, 2008
Detailed Description SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) SSM4K27CT ○ Switching Applications • Sma...
Datasheet PDF File SSM4K27CT PDF File

SSM4K27CT
SSM4K27CT

Overview
SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) SSM4K27CT ○ Switching Applications • Small package • Low on-resistance: RDS(ON) = 205 mΩ (max) (@VGS = 4.
0 V) RDS(ON) = 260 mΩ (max) (@VGS = 2.
5 V) RDS(ON) = 390 mΩ (max) (@VGS = 1.
8 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Drain-Source voltage VDSS 20 V Gate-Source voltage VGSS ±12 V Drain current DC ID Pulse IDP 0.
5 A 1.
0 Power dissipation PD (Note 1) 400 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high JEDEC ⎯ temperature/current/...


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