DatasheetsPDF.com

MG150Q2YS65H

Part Number	MG150Q2YS65H
Manufacturer	Toshiba Semiconductor
Description	High Power & High Speed Switching Applications
Published	Aug 6, 2008
Detailed Description	MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Applications Uni...
Datasheet	MG150Q2YS65H PDF File

Overview

MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Applications Unit: mm · High input impedance · Enhancement-mode · The electrodes are isolated from case.
Equivalent Circuit www.
DataSheet4U.
com E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 255 g (typ.
) ― ― 2-95A4A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal Mounting ¾ ¾ Rating 1200 ±20 150 300 150 300 890 150 -40 to 125 2500 (AC 1 minute) 3 3 Unit V V A Forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage te...

Similar Datasheet

MG150Q2YS65H High Power & High Speed Switching Applications - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)