DatasheetsPDF.com

SSM6J51TU

Toshiba Semiconductor
Part Number SSM6J51TU
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Jul 30, 2008
Detailed Description SSM6J51TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) SSM6J51TU High Current Switching Applicat...
Datasheet PDF File SSM6J51TU PDF File

SSM6J51TU
SSM6J51TU

Overview
SSM6J51TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) SSM6J51TU High Current Switching Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on-resistance: Ron = 54 mΩ (max) (@VGS = -2.
5 V) 85 mΩ (max) (@VGS = -1.
8 V) 150mΩ(max) (@VGS = -1.
5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS ±8 V Drain current DC ID Pulse IDP -4 A -8 1,2,5,6 : Drain 3 : Gate 4 : Source Drain power dissipation PD (Note 1) 500 mW Channel temperature Storage temperature range Tch 150 °C JEDEC - Tstg −55~150 °C JEITA - Note: Using ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)