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SSM6J50TU

Toshiba Semiconductor
Part Number SSM6J50TU
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Jul 30, 2008
Detailed Description SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J50TU ○ High Current Switching Applic...
Datasheet PDF File SSM6J50TU PDF File

SSM6J50TU
SSM6J50TU

Overview
SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J50TU ○ High Current Switching Applications Unit: mm • Compact package suitable for high-density mounting • Low on-resistance: Ron = Ron = Ron = 205mΩ (max) (@VGS = -2.
0 V) 100mΩ (max) (@VGS = -2.
5 V) 64mΩ (max) (@VGS = -4.
5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ±10 V Drain current DC ID -2.
5 A Pulse IDP -5 1,2,5,6 : Drain 3 : Gate 4 : Source Drain power dissipation Channel temperature PD 500 mW (Note 1) Tch 150 °C JEDEC - Storage temperature range Tstg −55 to 150 °C JEITA ...


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