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SSM6J23FE

Part Number	SSM6J23FE
Manufacturer	Toshiba Semiconductor
Description	Silicon P-Channel MOSFET
Published	Jul 30, 2008
Detailed Description	SSM6J23FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J23FE High Current Switching Applicat...
Datasheet	SSM6J23FE PDF File

Overview

SSM6J23FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J23FE High Current Switching Applications DC-DC Converter Unit: mm • Suitable for high-density mounting due to compact package • Low on-resistance: Ron = 160 mΩ (max) (@VGS = -4.
0 V) Ron = 210 mΩ (max) (@VGS = -2.
5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS ±8 V Drain current DC ID -1.
2 A Pulse IDP -4.
8 1,2,5,6 : Drain 3 : Gate 4 : Source Drain power dissipation Channel temperature Storage temperature range PD 500 mW (Note 1) Tch 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA 2-2N1A...

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SSM6J23FE Silicon P-Channel MOSFET - Toshiba Semiconductor

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