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SSM6J08FU

Part Number	SSM6J08FU
Manufacturer	Toshiba Semiconductor
Description	Silicon P-Channel MOSFET
Published	Jul 30, 2008
Detailed Description	SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM6J08FU Power Management Switch DC-DC ...
Datasheet	SSM6J08FU PDF File

Overview

SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.
18 Ω (max) (@VGS = −4 V) : Ron = 0.
26 Ω (max) (@VGS = −2.
5 V) • Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ±12 V Drain current DC ID −1.
3 A Pulse IDP (Note 2) −2.
6 Drain power dissipation PD (Note 1) 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of JEIT...

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SSM6J08FU Silicon P-Channel MOSFET - Toshiba Semiconductor

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