(GBU4x) SILICON BRIDGE RECTIFIERS
Description
BL
FEATURES
GALAXY ELECTRICAL
GBU4A --- GBU4M
VOLTAGE RANGE: 50 --- 1000 V CURRENT: 4.
0 A
SILICON BRIDGE RECT IFIERS
Ideal for printed circuit board Reliable low cos t cons truction utilizing m olded plas tic technique Plas tic m aterrial has U/L flam m ability clas s ification
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DataSheet4U.
com
GBU
.
933(23.
7) .
894(22.
7) .
185(4.
7) .
165(4.
2) .
160(4.
1) .
140(3.
5) 45 .
310(7.
9) .
290(7.
4)
0
.
140(3.
56) .
130(3.
30)
94V-O
+ +
.
075(1.
9)R.
TYP.
.
085(2.
16) .
065(1.
65)
.
740(18.
8) .
720(18.
3)
Mounting pos ition: Any Glass passivated chip junctions
.
080(2.
03) .
060(1.
52)
_
~
~
+
.
100(2.
54) .
085(2.
16) .
190(4.
83) .
210(5.
33)
.
050(1.
27) .
040(1.
02)
.
710(18) .
690(17.
5)
.
085(2.
18) .
075(1.
90)
.
022(.
56) .
018(.
46)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load.
For capacitive load,derate by 20%.
GBU 4A
Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average f orw ard Tc=100 output current @TA =40
GBU 4B
100 70 100
GBU 4D
200 140 200
GBU 4G
400 280 400 4.
0 3.
0 150.
0
GBU 4J
600 420 600
GBU 4K
800 560 800
GBU 4M
1000 700 1000
UNITS
V V V A
VRRM V R MS VDC
50 35 50
(note 1)
(note 2)
IF (AV)
Peak f orw ard surge current 8.
3ms single half -sine-w ave superimposed on rated load Maximum instantaneous f orw ard voltage at 2.
0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =125 (note 2) (note 1) Operating junction temperature range Storage temperature range
IF SM
A
VF IR CJ RθJA RθJC TJ TSTG
100
1.
0 5.
0 500.
0 45 22.
0 4.
2 - 55 ---- + 150 - 55 ---- + 150
V μA mA pF /W
Typical junction capacitance per leg (note 3) Typical thermal resistance per leg
N OTE: 1.
Unit case m ounted on 1.
6x1.
6x0.
06" thick (4.
0x4.
0x0.
15cm ) AI.
Plate.
2.
U nits m ounted on P.
C .
B.
with 0.
5x0.
5" (12x12m m) copper pads and 0.
375" (9.
5m m ) lead length.
3.
Measured at 1.
0 MH z and applied re...
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