(SST308 Series) SINGLE N-CHANNEL HIGH FREQUENCY JFET
Description
U/J/SST308 SERIES
Linear Integrated Systems
FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE ABSOLUTE MAXIMUM RATINGS1
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SINGLE N-CHANNEL HIGH FREQUENCY JFET
Gpg = 11.
5dB NF = 2.
7dB
TO-18 BOTTOM VIEW D
2 3
J SERIES
TO-92 BOTTOM VIEW D S G
@ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation (J/SST) Continuous Power Dissipation (U) Maximum Currents Gate Current (J/SST) Gate Current (U) Maximum Voltages Gate to Drain Gate to Source -25V -25V 10mA 20mA 350mW 500mW -55 to 150°C -55 to 135°C
G
S
1
1 2 3
SST SERIES
SOT-23 TOP VIEW D S
1 3 2
G
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL BVGSS VGS(F) IG rDS(on) en NF Gpg gfg gog CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Forward Voltage Gate Operating Current Drain to Source On Resistance Equivalent Noise Voltage Noise Figure Power Gain
2
MIN -25 0.
7
TYP
MAX 1
UNIT V pA Ω nV/√Hz
CONDITIONS IG = -1µA, VDS = 0V IG = 10mA, VDS = 0V VDG = 9V, ID = 10mA VGS = 0V, ID = 1mA VDS = 10V, ID = 10mA, f = 100Hz
-15 35 6 f = 105MHz f = 450MHz f = 105MHz f = 450MHz f = 105MHz f = 450MHz f = 105MHz f = 450MHz 1.
5 2.
7 16 11.
5 14 13 0.
16 0.
55
dB VDS = 10V, ID = 10mA mS
Forward Transconductance Output Conductance
Linear Integrated Systems
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SPECIFIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM.
VGS(off) IDSS Ciss Crss gfs gos CHARACTERISTIC Gate to Source Cutoff Voltage Source to Drain Saturation Current3 Input Capacitance Reverse Transfer Capacitance Forward Transconductance Output Conductance 4 1.
9 14 110 8 250 TYP J/SST308 MIN -1 12 MAX -6.
5 60 5 2.
5 10 250 J/SST309 MIN -1 12 MAX -4 30 5 2.
5 8 250 J/SST310 MIN -2 24 MAX -6.
5 60 5 2.
5 UNIT V mA pF mS µS CONDITIONS VDS = 10V, ID = 1n...
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