Photocoupler Photorelay - Toshiba Semiconductor
Description
TLP599B
TOSHIBA Photocoupler Photo Relay
TLP599B
Telecommunication Data Acquisition Measurement Instrumentation
Unit in mm
The TOSHIBA TLP599B consists of a gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a six lead www.
DataSheet4U.
com plastic DIP (DIP6).
The TLP599B is a bi-directional switch which can replace mechanical relays in many applications.
· · · · · · · Peak off−state voltage: 100V (min.
) On−state current: 200mA (max.
) (A connection) On−state resistance: 4Ω (max.
) (A connection) Insulation thickness: 0.
4mm(max.
) Isolation voltage: 2500Vrms (min.
) UL recognized: UL1577, file no.
E67349 Trigger LED current (Ta = 25°C) TOSHIBA Weight: 0.
4g 11−7A8
Classification (Note 1) (IFT2) Standard
Trigger LED Current (mA) @ION = 200mA Min.
Max.
¾ ¾ 2 5
Marking Of Classification T2 T2, blank
Pin Configuration (top view)
1 2 3 6 5 4
1.
: Anode 2.
: Cathode 3.
: NC 4.
: Drain D1 5.
: Source 6.
: Drain D2
(Note 1): Application type name for certification test, please use standard product type name, i.
e.
TLP599B (IFT2) : TLP599B
Schematic
1 2 6 5 4
1
2002-09-25
TLP599B
Maximum Ratings (Ta = 25°C)
Characteristic Forward current Forward current derating (Ta ≥ 25°C) LED Peak forward current (100 µs pulse, 100 pps) Reverse voltage Junction temperature Off-state output terminal voltage A connection Detector
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Symbol IF ∆IF / °C IFP VR Tj VOFF
Rating 50 -0.
5 1 5 125 100 200
Unit mA mA / °C A V °C V
On-state RMS current
B connection C connection A connection
ION
300 400 -2
mA
On-state current derating(Ta ≥ 25°C)
B connection C connection
∆ION / °C
-3 -4
mA / °C
Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min.
, R.
H.
≤ 60%) (Note 2)
Tj Tstg Topr Tsol BVS
125 -55~125 -40~85 260 2500
°C °C °C °C Vrms
(Note 2): Device considered a two-terminal device : Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted togethe...
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