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S3PDB80

Sirectifier Semiconductors

Three Phase Rectifier Modules


S3PDB80
S3PDB80

PDF File S3PDB80 PDF File


Description
S3PDB80 Three Phase Rectifier Modules _ Dimensions in mm (1mm=0.
0394") 2.
5 + Type S3PDB80N08 S3PDB80N12 S3PDB80N14 S3PDB80N16 S3PDB80N18 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 M5x10 7 72 60 54 2.
5 20 18 20 2.
5 www.
DataSheet4U.
com + – 21.
6 5.
3 + 10 ~~~ 23 48 Symbol Idav Idav Test Conditions TC=110oC, module TA=45oC (RthCA=0.
6K/W), module TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.
3ms (60Hz), sine t=10ms(50Hz), sine t=8.
3ms(60Hz), sine t=10ms (50Hz), sine t=8.
3ms (60Hz), sine t=10ms(50Hz), sine t=8.
3ms(60Hz), sine Maximum Ratings 80 57 750 820 670 740 2800 2800 2250 2250 -40.
.
.
+150 150 -40.
.
.
+125 Unit A IFSM It 2 A2s TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA t=1min t=1s 2500 3000 _ 15% 5+ _ 15% 5+ 160 Mounting torque (M5) Terminal connection torque (M5) typ.
Nm g 5.
3 13.
3 42 ~ ~ ~ 3 ~ ~ ~ A o C V~ 30 S3PDB80 Three Phase Rectifier Modules Symbol IR VF VTO www.
DataSheet4U.
com Test Conditions VR=VRRM; TVJ=25 C VR=VRRM; TVJ=TVJM IF=150A; TVJ=25oC For power-loss calculations only TVJ=TVJM per diode per module per diode per module Creeping distance on surface Creepage distance in air Max.
allowable acceleration o Characteristic Values _ 0.
3 < _5 < _ 1.
6 < 0.
8 5 1.
1 0.
183 1.
52 0.
253 10 9.
4 50 Unit mA V V m K/W K/W mm mm m/s2 rT RthJC RthJK dS dA a FEATURES * Package with screw terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop APPLICATIONS * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors ADVANTAGES * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling ...



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