IGBT
Description
SEMiX101GD128Ds
SEMiX®13
SPT IGBT Modules
SEMiX101GD128Ds
Preliminary Data Features
• Homogeneous Si • SPT = Soft-Punch-Through technology • VCE(sat) with positive temperature
coefficient • High short circuit capability • UL recognised file no.
E63532
Typical Applications
• AC inverter drives • UPS • Electronic welders up to 20 kHz
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
IFnom IFRM IFSM Tj
IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS) Tstg Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s)
IC = 50 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C Tj = 125 °C
VGE=VCE, IC = 2 mA
VGE = 0 V VCE = 1200 V
Tj = 25 °C Tj = 125 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V.
.
.
+ 15 V
Tj = 25 °C
VCC = 600 V IC = 50 A Tj = 125 °C RG on = 8 Ω RG off = 8 Ω
per IGBT per IGBT
GD © by SEMIKRON
Rev.
9 – 02.
12.
2008
Values
1200 104 74 50 100 -20 .
.
.
20
10
-40 .
.
.
150
88 61 50 100 550 -40 .
.
.
150
600 -40 .
.
.
125
4000
Unit
V A A A A V
µs
°C
A A A A A °C
A °C V
min.
typ.
max.
Unit
1.
9
2.
35
V
2.
10
2.
55
V
1
1.
15
V
0.
9
1.
05
V
18.
0
24.
0 mΩ
24.
0
30.
0 mΩ
4.
5
5
6.
5
V
0.
1
0.
3
mA
mA
4.
7
nF
0.
29
nF
0.
19
nF
480
nC
5.
00
Ω
115
ns
30
ns
5.
2
mJ
340
ns
55
ns
5.
5
mJ
0.
28 K/W
K/W
1
SEMiX101GD128Ds
SEMiX®13
SPT IGBT Modules
SEMiX101GD128Ds
Preliminary Data Features
• Homogeneous Si • SPT = Soft-Punch-Through technology • VCE(sat) with positive temperature
coefficient • High short circuit capability • UL recognised file no.
E63532
Typical Applications
• AC inverter drives • UPS • Electronic welders up to 20 kHz
Characteristics
Symbol...
Similar Datasheet
- SEMIX101GD128DS IGBT - Semikron International
