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C5353

Part Number	C5353
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Apr 28, 2008
Detailed Description	2SC5353 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5353 Switching Regulator and High Voltage ...
Datasheet	C5353 PDF File

Overview

2SC5353 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5353 Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications Unit: mm • • Excellent switching times: tr = 0.
7 μs (max), tf = 0.
5 μs (max) High collectors breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 900 800 7 3 5 1 2.
0 25 150 www.
DataSheet.
co.
kr Unit V V V A A W °C °C JEDEC JEI...

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