Fast IGBT
Description
SKW25N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter G - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Pb-free lead plating; RoHS compliant 1 • Qualified according to JEDEC for target applications • Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ Type SKW25N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.
6mm (0.
063 in.
) from case for 10s Tj , Tstg Ts -55.
.
.
+150 260 °C
2
C
E
PG-TO-247-3-21 (TO-247AC)
VCE 1200V
IC 25A
Eoff 2.
9mJ
Tj 150°C
Marking K25N120
Package PG-TO-247-3-21
Symbol VCE IC
Value 1200 46 25
Unit V A
ICpul s IF
84 84
42 25 IFpul s VGE tSC Ptot 80 ±20 10 313 V µs W
VGE = 15V, 100V≤VCC ≤1200V, Tj ≤ 150°C
1 2
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s.
1 Rev.
2_1 Apr 06
Power Semiconductors
SKW25N120
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 15 0 0 µ A VCE(sat) V G E = 15 V , I C = 25 A T j =2 5 ° C T j =1 5 0 ° C Diode forward voltage VF V G E = 0V , I F = 2 5 A T j =2 5 ° C T j...
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