Fast IGBT
Description
SKW20N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Very soft, fast recovery anti-parallel EmCon diode • Pb-free lead plating; RoHS compliant 1 • Qualified according to JEDEC for target applications • Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ Type SKW20N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Soldering temperature wavesoldering, 1.
6 mm (0.
063 in.
) from case for 10s Operating junction and storage temperature Tj , Tstg -55.
.
.
+150 °C Ts 260 °C
2
C
G
E
PG-TO-247-3-1 (TO-247AC)
VCE 600V
IC 20A
VCE(sat) 2.
4V
Tj 150°C
Marking K20N60
Package PG-TO-247-3-21
Symbol VCE IC
Value 600 40 20
Unit V A
ICpul s IF
80 80
40 20 IFpul s VGE tSC Ptot 80 ±20 10 179 V µs W
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1 2
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s.
1 Rev.
2_1 Apr 06
SKW20N60
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 20 A T j =2 5 ° C T j =...
Similar Datasheet
