Power-Transistor
Description
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IPB06CNE8N G
IPI06CNE8N G IPP06CNE8N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max (TO263) ID 85 6.
2 100 V mΩ A
• Ideal for high-frequency switching and synchronous rectification Type IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G
Package Marking
PG-TO263-3 06CNE8N
PG-TO262-3 06CNE8N
PG-TO220-3 06CNE8N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C I D=100 A, R GS=25 Ω I D=100 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C Value 100 88 400 480 6 ±20 214 -55 .
.
.
175 55/175/56 mJ kV/µs V W °C Unit A
Rev.
1.
01
page 1
2006-02-14
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IPB06CNE8N G
IPI06CNE8N G IPP06CNE8N G
Parameter
Symbol Conditions min.
Values typ.
max.
Unit
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area5) 0.
7 62 40 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=180 µA V DS=68 V, V GS=0 V, T j=25 °C V DS=68 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A, TO220, TO262 V GS=10 V, I D=100 A, TO263 Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=100 A 85 2 3 0.
1 4...
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