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C5200

Toshiba
Part Number C5200
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Mar 5, 2008
Detailed Description 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm • • • High br...
Datasheet PDF File C5200 PDF File

C5200
C5200

Overview
2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm • • • High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 230 230 5 15 1.
5 150 150 −55 to 150 http://www.
DataSheet4U.
net/ Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F1A Electrical Characteristics (Tc = 25°C) Charact...


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