NPN Transistor
Description
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DATA SHEET
SILICON POWER TRANSISTOR
2SC2334
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC2334 is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.
ORDERING INFORMATION
Part No.
2SC2334 Package TO-220AB
FEATURES
• Low collector saturation voltage • Fast switching speed • Complementary transistor: 2SA1010 (TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg TC = 25°C TA = 25°C PW ≤ 300 µs, duty cycle ≤ 10% Conditions Ratings 150 100 7.
0 7.
0 15 3.
5 40 1.
5 150 −55 to +150 Unit V V V A A A W W °C °C
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Document No.
D14902EJ2V1DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan
2002
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2SC2334
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Collector to emitter voltage Symbol VCEO(SUS) VCEX(SUS)1 VCEX(SUS)2 Collector cutoff current ICBO ICER ICEX1 ICEX2 Emitter cutoff current DC current gain IEBO hFE1 hFE2 hFE3 Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time VCE(sat) VBE(sat) ton tstg tf Conditions IC = 5.
0 A, IB1 = 0.
5 A, L = 1 mH IC = 5.
0 A, IB1 = −IB2 = 0.
5 A, VBE(OFF) = −5.
0 V, L = 180 µH, clamped IC = 10 A, IB1 = 1.
0 A, IB2 = −0.
5 A, VBE(OFF) = −5.
0 V, L = 180 µH, clamped VCB = 100 V, IE = 0 A VCE = 100 V, RBE = 51 Ω, TA = 125°C VC...
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