Standard Gate SCR
Description
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DCP10C60
Standard Gate Silicon Controlled Rectifiers
Features
Repetitive Peak Off-State Voltage : 600V R.
M.
S On-State Current ( IT(RMS)= 10 A ) Low On-State Voltage (1.
4V(Typ.
) @ ITM) Non-isolated Type
1.
Cathode
Symbol
2.
Anode
BVDRM = 600V IT(RMS) = 66 A
3.
Gate
ITSM = 6A
TO-220
General Description
Standard gate triggering thyristor is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system.
1 2 3
Absolute Maximum Ratings
Symbol
VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition
sine wave,50 to 60Hz,gate open half sine wave : TC =111 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.
3ms TC = 111 °C, pulse width TC = 111 °C,pulse width TC = 111 °C, pulse width TC =111 °C, pulse width 1.
0 1.
0 1.
0 1.
0
Parameter
Repetitive Peak Off-State Voltage Average On-State Current R.
M.
S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature
Ratings
600 6.
4 10 110 60 50 5 0.
5 2 5.
0 - 40 ~ 125 - 40 ~ 150
Units
V A A A A2 s A/ W W A V °C °C
June, 2005.
Rev.
0 copyright @ D&I Semiconductor Co.
, Ltd.
, All rights reserved.
1/5
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DCP10C60
Electrical Characteristics
Symbol Items
VAK = VDRM TC = 25 °C TC = 125 °C ITM = 20 A VAK = 6 V(DC), RL=10 IGT Gate Trigger Current (2) TC = 25 °C 15 mA tp=380 10 200 1.
6 V ( TC = 25 °C unless otherwise noted )
Conditions
Ratings Min.
Typ.
Max.
Unit
IDRM
Repetitive Peak Off-State Current Peak On-State Voltage (1)
VTM
VD = 6 V(DC), RL=10 VGT Gate Trigger Voltage (2) TC = 25 °C 1.
5 V
VGD dv/dt
Non-Trigger Gate Voltage (...
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