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C3303

Toshiba
Part Number C3303
Manufacturer Toshiba
Description 2SC3303
Published Oct 30, 2007
Detailed Description 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 High Current Switching Applications DC-DC ...
Datasheet PDF File C3303 PDF File

C3303
C3303

Overview
2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 High Current Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.
4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.
0 μs (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 7 V DC Collector current IC 5 A Pulse ICP 8 Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.
0 W 20 Junction temperature Tj 150 °C JEDEC ― Storage temperature range Tstg...


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