High Power & High Speed Switching Applications
Description
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TOSHIBA IGBT Module Silicon N Channel IGBT
MG400Q1US65H
MG400Q1US65H
High Power & High Speed Switching Applications
Unit: mm
High input impedance Enhancement-mode The electrodes are isolated from case.
Equivalent Circuit
E
C
E
JEDEC
G (B)
― ― 2-109F1A
JEITA TOSHIBA
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emi...
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