PNP EPITAXIAL TRANSISTOR - GTM
Description
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CORPORATION
G8550S
Description Features
PNP EPITAXIAL PLANAR TANSISTOR
ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B
The G8550S is designed for general purpose amplifier applications.
* High DC Current gain: 100-500 at IC= 150mA *Complementary to G8050S
Package Dimensions
D E S1
TO-92
A
b1 S E A T IN G PLANE
L
REF.
A S1 b b1 C
e1
e
b
C
Millimeter Min.
Max.
4.
45 4.
7 1.
02 0.
36 0.
51 0.
36 0.
76 0.
36 0.
51
REF.
D E L e1 e
Millimeter Min.
Max.
4.
44 4.
7 3.
30 3.
81 12.
70 1.
150 1.
390 2.
42 2.
66
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO
VCEO VEBO
Ratings +150 -55 ~ +150 -25 -20 -5 -700 625
Unit
V V V mA mW
IC PD
Characteristics
Symbol BVCBO BVCEO BVEBO ICEX *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob
at Ta = 25
Min.
-25 -20 -5 100 150 Typ.
100 Max.
-1 -0.
5 -1 500 10 MHz pF Unit V V V uA V V IC=-10uA, IE=0 IC=-1mA, IB=0 IE=-10uA, , IC =0 VCE=-20V, IE=0 IC=-0.
5A, IB=-50mA VCE=-1V, IC=-150mA VCE=-1V, IC=-150mA VCE=-1V, IC=-500mA VCE=-10V, IC =-20mA, f=100MHz VCB=-10V, f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions
Classification Of hFE1
Rank Range C 100-180 D 160-300 E 250-500
G8550S
Page: 1/3
CORPORATION
Characteristics Curve
ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B
G8550S
Page: 2/3
CORPORATION
ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B
Important Notice: All rights are reserved.
Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory: Taiwan: No.
17-1 T...
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