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TIM1011-8L

Toshiba Semiconductor
Part Number TIM1011-8L
Manufacturer Toshiba Semiconductor
Description MICROWAVE POWER GaAs FET
Published Sep 6, 2007
Detailed Description www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-8L TECHNICAL DATA FEATURES „ LOW INTERMO...
Datasheet PDF File TIM1011-8L PDF File

TIM1011-8L
TIM1011-8L

Overview
www.
DataSheet4U.
com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-8L TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.
0dBm Single Carrier Level „ HIGH POWER P1dB=39.
5 dBm at 10.
7 GHz to 11.
7 GHz „ HIGH GAIN G1dB=6.
0 dB at 10.
7 GHz to 11.
7 GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ( Ta= 25°C ) UNIT dBm dB A % dBc A °C MIN.
38.
5 5.
0 ⎯ ⎯ -42 ⎯ ⎯ TYP.
MAX.
39.
5 ⎯ 6.
0 3.
4 22 -45 3.
4 ⎯ ⎯ 4.
4 ⎯ ⎯ 4.
4 80 CONDITIONS VDS= 9V f= 10.
7 to 11.
7GHz ηadd IM3 IDS2 ΔTch Two-Tone Test Po=28.
0dBm (Single Carrier Level) (VDS X IDS + Pin – P1dB) X Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.
) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Trans...


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