TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
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DC9013
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 1W output amplifier of portable redios in class B push-pull operation.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.5...
