(ML9xx40) 2.5Gbps InGaAsP DFB LASER DIODE
Description
MITSUBISHI LASER DIODES
ML9XX40 SERIES
Notice : Some parametric limits are subject to change 2.
5Gbps InGaAsP DFB LASER DIODE
TYPE NAME
DESCRIPTION
ML925B40F / ML920J40S ML925J40F / ML920L40S
APPLICATION
· 2.
5Gbps long-haul transmission · Coarse WDM application
ML9XX40 series are uncooled DFB (Distributed Feedback) laser diodes for 2.
5Gbps transmission emitting light beam at 1470~1610nm.
λ/4 shifted grating structure is employed to obtain excellent SMSR performance under 2.
5Gbps modulation.
Furthermore, ML9xx40 can operate in the wide temperature range from 0oC to 85 oC without any temperature control.
They are well suited for light source in long distance digital transmission application of coarse WDM.
FEATURES
· λ/4 shifted grating structure · Wide temperature range operation (0oC to 85oC) · High side-mode-suppression-ratio (typical 45dB) · High resonance frequency (typical 11GHz)
ABSOLUTE MAXIMUM RATINGS
Symbol Po If VRL IFD VRD Tc Tstg Parameter Output power Forward current (Laser diode) Reverse voltage (Laser diode) Forward current (Photo diode) Reverse voltage (Photo diode) Case temperature Storage temperature Conditions CW ------------Ratings 6 150 2 2 20 0 to +85 -40 to +100 Unit mW mA V mA V ºC ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)
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Symbol Ith
Parameter Threshold current
Iop
Operation current
Vop η λp SMSR θ // θ┴ fr tr,tf
Operating voltage Slope efficiency Peak wavelength Side mode suppression ratio Side mode suppression ratio(RF) Beam divergence angle (parallel) <*6> (perpendicular) <*6> Resonance frequency Rise and Fall time <*7>
Test conditions CW CW <*1> Tc=85ºC <*2> CW, Po=5mW CW, Po=5mW <*1> Tc=85ºC <*2> CW, Po=5mW CW, Po=5mW CW, Po=5mW <*3> CW, Po=5mW CW, Po=5mW, Tc=0 to 85ºC 2.
48832Gbps,Ib=Ith, Ipp=40mA CW, Po=5mW CW, Po=5mW 2.
48832Gbps,Ib=Ith, Ipp=40mA 2.
48832Gbps,Ib=Ith, Ipp=40mA 20%-80% CW, Po=5mW,VRD=1V,RL=10Ω VRD=5V VRD=5V
Min.
Typ.
Max.
Unit --10 15 mA --35 40 --45 50 --35 45 mA --70 80 --90 100 --1.
...
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