1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Description
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TE CH
T431616B
SDRAM
FEATURES
+2.7 to +3.6V power supply Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock Burst Read Single-bit Write operation DQM for masking Auto refresh and self refresh 32ms refresh period (2K cycle) MRS cycle with address key programs...
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