NPN General Purpose Amplifier - National Semiconductor
Description
2N3904 / MMBT3904 / MMPQ3904 / PZT3904
N
2N3904
C C B
Discrete Power & Signal Technologies
MMBT3904
E
TO-92
E
SOT-23
Mark: 1A
B
MMPQ3904
B E B E B E B
PZT3904
C
C
E
www.
DataSheet4U.
com
SOIC-16
C
C
C
C
C
C
C
E C B
SOT-223
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
Sourced from Process 23.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40 60 6.
0 200 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
2N3904 / MMBT3904 / MMPQ3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current I C = 10 mA, IB = 0 I C = 10 µ A, IE = 0 I E = 10 µA, I C = 0 VCE = 30 V, VEB = 0 VCE = 30 V, VEB = 0 40 60 6.
0 50 50 V V V nA nA
ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.
1 mA, VCE = 1.
0 V IC = 1.
0 mA, VCE = 1.
0 V IC = 10 mA, VCE = 1.
0 V IC = 50 mA, VCE = 1.
0 V IC = 100 mA, VCE = 1.
0 V IC = 10 mA, IB = 1.
0 mA IC = 50 mA, IB = 5.
0 mA IC = 10 mA, IB = 1.
0 mA IC = 50 mA, IB = 5.
0 mA 40 70 100 60 30 300
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
0.
65
0.
2 0.
3 ...
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