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C5242

Toshiba Semiconductor
Part Number C5242
Manufacturer Toshiba Semiconductor
Description 2SC5242
Published May 28, 2007
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications 2SC5242 Unit: mm • High Colle...
Datasheet PDF File C5242 PDF File

C5242
C5242


Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications 2SC5242 Unit: mm • High Collector breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.
5 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 130 W Tj 150 °C T stg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-16C1A Note: Using continuously under heav...



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