N-Channel MOSFET
Description
CEP04N7/CEB04N7 CEI04N7/CEF04N7
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP04N7 CEB04N7 CEI04N7 CEF04N7 VDSS 700V 700V 700V 700V RDS(ON) 3.
5Ω 3.
5Ω 3.
5Ω 3.
5Ω ID 4A 4A 4A 4A d @VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEI SERIES TO-262(I2-PAK)
G D S
CEP SERIES TO-220
G
D S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD TJ,Tstg
e
TO-220F
Units V V
700
±30
4 12 89 0.
71 -55 to 150 4
d d
A A W W/ C C
12 35
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
0.
28
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 1.
4 62.
5 Limit 3.
6 65 Units C/W C/W
2005.
April 4 - 18
http://www.
cetsemi.
com
CEP04N7/CEB04N7 CEI04N7/CEF04N7
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
b c
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS f VSD VGS = 0V, IS = 2.
5A VDS = 480V, ID = 4A, VGS = 10V VDD =...
Similar Datasheet
