N-Channel MOSFET
Description
FCP4N60 600V N-Channel MOSFET
FCP4N60
600V N-Channel MOSFET
Features
650V @TJ = 150°C Typ. RDS(on) = 1.0Ω Ultra low gate charge (typ. Qg = 12.8nC) Low effective output capacitance (typ. Coss.eff = 32pF) 100% avalanche tested
SuperFET
Description
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing...
Fairchild Semiconductor
FCP4N60 PDF File
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