N-CHANNEL MOSFET
Description
STB20NM60A-1 STP20NM60A - STF20NM60A
N-CHANNEL 650V@Tjmax - 0.
25Ω - 20A I²PAK/TO-220/TO-220FP
MDmesh™ MOSFET
TYPE STB20NM60A-1 STP20NM60A STF20NM60A
s s s s
VDSS @Tjmax 650 V 650 V 650 V
RDS(on) < 0.
29 Ω < 0.
29 Ω < 0.
29 Ω
ID 20 A 20 A 20 A
3
TYPICAL RDS(on) = 0.
25Ω HIGH dv/dt LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE
3 12
1
2
I²PAK
TO-220
3 1 2
DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.
The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that ofwww.
DataSheet4U.
com similar competition’s products.
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s SPECIFICALLY DESIGNED FOR ADAPTORS IN QUASI-RESONANT CONFIGURATION
ORDER CODES
PART NUMBER STB20NM60A-1 STP20NM60A STF20NM60A MARKING B20NM60A P20NM60A F20NM60A PACKAGE I2PAK TO-220 TO-220FP PACKAGING TUBE TUBE TUBE
March 2004
1/12
STB20NM60A-1/STP20NM60A/STF20NM60A
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STB20NM60A-1 STP20NM60A VGS ID ID IDM ( ) PTOT dv/dt (1) VISO Tstg Tj Gate-source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature -–55 to 150 20 12.
6 80 192 1.
2 15 2500 ±30 20(*) 12.
6(*) 80(*) 45 0.
36 STF20NM60A V A A A W W/°C V/ns V °C Unit
( ) Pulse width limited by safe operating area (1) ISD ≤ 20A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
I2PAK/TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.
65 62.
5 300 TO-...
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